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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1120 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V -65 o C to 150o C 20 A RF CHARACTERISTICS ( 200 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 10 55 20:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = Idq = Idq = 2 A, Vds = 28.0 V, F = 175 MHz 2 A, Vds = 28.0 V, F = 175 MHz 2 A, Vds = 28.0 V, F = 175 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 5 0.18 30 200 25 150 MIN 65 5 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.5 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 20 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1120 POUT VS PIN GRAPH F1120 POUT VS PIN F=175 MHZ; IDQ=2.0A; VDS=28.0V 250 18.00 17.00 200 16.00 150 15.00 14.00 100 Efficiency = 75% 50 12.00 11.00 0 0 2 4 6 8 10 12 14 16 18 POUT CAPACITANCE VS VOLTAGE F1J 5 DICE CAPACITANCE 1000 Ciss 100 Coss Crss 13.00 10.00 20 GAIN 10 0 5 10 15 20 25 30 PIN IN WATTS VDS IN VOLTS IV CURVE F1J5DICEIV 45 40 35 ID IN AMPS 30 25 20 15 10 5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 V SINV L S D OT vg=8v 14 vg=10v 16 18 vg=12v 20 ID AND GM VS VGS F1J 5 DICE ID & GM Vs VG 100.00 Id in amps; Gm in mhos Id 10.00 gM 1.00 0.10 0 2 4 6 Vgs in Volts 8 10 12 Vg=6v S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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